sio2 films造句
造句與例句
手機版
- Properties of plasma-deposited amorphous sio2 films
2薄膜的特性研究 - Influence of sio2 film on isothermal oxidation behavior of ti6al4v alloys
合金恒溫氧化行為的研究 - Effects of multilayer structure of ag-sio2 films on the photonic band gap
2多層薄膜對光子帶隙的影響 - The process of cld-sio2 films is first studied in detail following houng et al .'s work
首先，我們先仔細(xì)研究了化學(xué)液相淀積氧化硅薄膜的過程(主要是參考houng等人的工作)。 - It was found that the thickness of the film can improved with adding some mucilage glue . a low temperature sinter can acquire a transparent sio2 film on the gold electrode
增粘劑的加入可提高一次涂膜的厚度，低溫?zé)Y(jié)可在金電極上得到表面光亮的二氧化硅玻璃薄膜，絕緣性能良好。 - The sims, ir and raman analysis results show that the tritium permeation barrier ( tpb ) is formed when tic and sio2 films are annealed in hydrogen at about 350 ?
利用二次離子質(zhì)譜(sims)、紅外吸收光譜(ir)及激光喇曼光譜(raman)技術(shù)，證實了tic和sio2在350左右的氫中退火可形成防氚滲透阻擋層。 - Xps results confirm the formation of sio2 . xrd results show that deposited sio2 films are amorphous . heat treatments explain that films are still amorphous as the temperature of heat treatment reach 800
xrd分析結(jié)果表明，所制備的sio_2薄膜結(jié)構(gòu)為非晶態(tài)；在800以下退火，薄膜的結(jié)構(gòu)沒有發(fā)生明顯的改變，仍為非晶態(tài)。 - The results of design explain that if sio2 films deposited on the surfaces of sapphire the average transmittance in 3 ~ 5 m waveband can exceed 97 %, which can meet the requirements of missile dome in infrared application
設(shè)計結(jié)果表明，藍(lán)寶石襯底雙面鍍sio_2、sio_2/si等膜系，在35m波段的平均透過率大于97，可滿足導(dǎo)彈頭罩設(shè)計和使用的要求。 - 3 . the pl results of si-sio2 films show that emission spectra of samples have 4 luminescent band peak at 320nm, 410nm, 560nm, and630nm, respectively, at room temperature, ta, the excitation wavelength, argon pressure et al
三根據(jù)pl譜，分析了si一510:薄膜樣品的室溫光致發(fā)光現(xiàn)象，樣品有一320，翻，一410nm，一56onm和一630nm四個pl峰，它們的pl峰是相互分離的。 - Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge-sio2 films . the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films
光吸收特性研究表明，因量子限域效應(yīng)，對于ge-sio_2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍(lán)移的現(xiàn)象。 - It's difficult to see sio2 films in a sentence. 用sio2 films造句挺難的
- It is found that the pl spectra of al-si-sio2 films are composed of 3 bands located at about 370nm, 410nm, and 510nm, respectively . the peak position changes little with the different amount of al, while the intensity of the pl peak changes
ple結(jié)果表明，37onm和410nm的pl，峰與樣品中的氧空位缺陷有關(guān)，而510nm的pl峰則是由于鋁的摻入改變了樣品中的缺陷狀態(tài)所致，是al、si、o共同而復(fù)雜的作用結(jié)果。 - This thesis is researching the surface antibacterial application in stainless steel . preparing two antibacterial films that have different properties in the surface of stainless steel, silver doped tio2 or sio2 films and silver doped sca ( silane coupling agents ) film
本課題研究不銹鋼的表面抗菌化，在不銹鋼表面制備兩種性質(zhì)不同的抗菌膜層，即摻銀tio_2、sio_2無機抗菌薄膜和摻銀有機硅烷抗菌薄膜。 - In this paper, plasma-enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p-sio2 films and p-sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse . this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2 . the results showed that the p-sio2 film was smooth, dense, and structurally amorphous
實驗結(jié)果顯示，用pecvd法淀積的p-sio_2膜是一表面平坦且致密的非晶質(zhì)結(jié)構(gòu)的薄膜，與硅片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a/min左右；在基板溫度410時有最大的硬度可達(dá)16gpa；其應(yīng)力為壓縮應(yīng)力，可達(dá)-75mpa；薄膜的臨界荷重為46.5un。 - In this paper, plasma-enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p-sio2 films and p-sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse . this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2 . the results showed that the p-sio2 film was smooth, dense, and structurally amorphous
實驗結(jié)果顯示，用pecvd法淀積的p-sio_2膜是一表面平坦且致密的非晶質(zhì)結(jié)構(gòu)的薄膜，與硅片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a/min左右；在基板溫度410時有最大的硬度可達(dá)16gpa；其應(yīng)力為壓縮應(yīng)力，可達(dá)-75mpa；薄膜的臨界荷重為46.5un。 - We describe also some methods of fabricating si-based quantum-dot . we introduce the sol-gel method for the fabrication of n-si / sio2 film and give the sem ( scan-electronics microscope ) of n-si / sio2 and energy spectra of n-si / sio2 . these works are the base for the study of si-based quantum-dot light emitting
本文描述了制備si基量子點的幾種常用方法，介紹了本文中所使用的溶膠-凝膠方法制備nc-si(si量子點)/sio_2薄膜，給出了nc-si/sio_2薄膜的掃描電鏡圖像和反映nc-si/sio_2薄膜成分的能譜圖，為我們在si基量子點發(fā)光的研究中作進(jìn)一步的工作奠定了基礎(chǔ)。 - With the increase of the amount of al, the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co-function of al, si, and o . el devices have been fabricated on three types of silicon based oxide films ( ge-sio2 films, si-sio2 films, and al-sio2 films )
用不同的方法制備的51一5102薄膜、ge一510:薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發(fā)光現(xiàn)象，峰位都在510nm左右，其峰位不因薄膜樣品內(nèi)所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發(fā)光主要來源于電子和空穴在510、基質(zhì)中的發(fā)光中心的輻射復(fù)合發(fā)光。 - With the increase of the amount of al, the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co-function of al, si, and o . el devices have been fabricated on three types of silicon based oxide films ( ge-sio2 films, si-sio2 films, and al-sio2 films )
用不同的方法制備的51一5102薄膜、ge一510:薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發(fā)光現(xiàn)象，峰位都在510nm左右，其峰位不因薄膜樣品內(nèi)所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發(fā)光主要來源于電子和空穴在510、基質(zhì)中的發(fā)光中心的輻射復(fù)合發(fā)光。 - With the increase of the amount of al, the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co-function of al, si, and o . el devices have been fabricated on three types of silicon based oxide films ( ge-sio2 films, si-sio2 films, and al-sio2 films )
用不同的方法制備的51一5102薄膜、ge一510:薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發(fā)光現(xiàn)象，峰位都在510nm左右，其峰位不因薄膜樣品內(nèi)所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發(fā)光主要來源于電子和空穴在510、基質(zhì)中的發(fā)光中心的輻射復(fù)合發(fā)光。 - At the initial stage of planar technique, b was employed as ideal diffusion impurity in base-region of npn si planar devices because of the match of its solid-solubility and diffusion coefficient in si with those of p in emission-region, and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly-changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high-reversal-voltage devics . thereafter b-a1 paste-layer diffusion technology and close-tube ga-diffusion technology had been developed, while the former can lead to relatively large the base-region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由于b在硅中的固溶度、擴散系數(shù)與n型發(fā)射區(qū)的磷相匹配，sio_2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區(qū)擴散源，但b在硅中的固溶度大(1000時達(dá)到510~(20)，擴散系數(shù)小，b在硅中的雜質(zhì)分布不易形成pn結(jié)中雜質(zhì)的線性緩變分布，導(dǎo)致器件不能滿足高反壓的要求，隨之又出現(xiàn)了硼鋁涂層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區(qū)偏差，雜質(zhì)在硅內(nèi)存在突變區(qū)域，導(dǎo)致放大系數(shù)分散嚴(yán)重，下降時間t_f值較高，熱穩(wěn)定性差；后者需要難度較大的真空封管技術(shù)，工藝重復(fù)性差，報廢率高，在擴散質(zhì)量、生產(chǎn)效率諸方面均不能令人滿意。 - sio2 films are prepared on silicon substrates in order to get the functions of the main experiment parameters such as rf power, gas flow, vacuum gas pressure, target-substrate distance and substrate temperature on deposition rate of films . the optimized parameters ranges are obtained by considering films deposition rate, composition and structure
在bms450型磁控濺射鍍膜機上優(yōu)化出了制備sio_2薄膜的工藝參數(shù)范圍，并揭示了氣體流量、射頻功率、靶基距、襯底溫度、濺射氣壓等參數(shù)對薄膜沉積速率的影響規(guī)律。
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